DEFECTS INDUCED BY WAFER PROCESSING AND THERMAL-TREATMENT IN INP PROBED WITH MONOENERGETIC POSITRONS

被引：10

作者：

UEDONO, A ^{[1
]}

TANIGAWA, S ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 05期

关键词：

Defect; Doppler broadening profile; Heat treatment; Indium phosphide; Positron annihilation; Positron beam; Vacancy; Wafer processing;

D O I：

10.1143/JJAP.29.909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable-energy positron-beam studies have been made on InP single crystals. Doppler broadening profiles of the positron annihilation and the mean diffusion length of positrons were found to be sensitive to defects under the subsurface region. For a specimen after high-quality polishing, vacancy-type defects with a concentration of 1018 cm-3 were observed in the range of 0∼400 nm. For the specimen after heat treatment, a damaged layer introduced by dephosphorization was observed. An overlayer containing monovacancies, with a thickness of 140 nm, was found to be formed after 450°C annealing. © 1990 The Japan Society of Applied Physics.

引用

页码：909 / 912

页数：4

共 14 条

[1] POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS [J].

DLUBEK, G ;

BRUMMER, O ;

PLAZAOLA, F ;

HAUTOJARVI, P .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03) :331-344

[2] POSITRON DIFFUSION IN MO - THE ROLE OF EPITHERMAL POSITRONS [J].

HUOMO, H ;

VEHANEN, A ;

BENTZON, MD ;

HAUTOJARVI, P .

PHYSICAL REVIEW B, 1987, 35 (15) :8252-8255

[3] HYDROGEN-IMPLANTATION-INDUCED DAMAGE IN SILICON [J].

KEINONEN, J ;

HAUTALA, M ;

RAUHALA, E ;

EROLA, M ;

LAHTINEN, J ;

HUOMO, H ;

VEHANEN, A ;

HAUTOJARVI, P .

PHYSICAL REVIEW B, 1987, 36 (02) :1344-1347

[4] DEFECT FORMATION IN H-IMPLANTATION OF CRYSTALLINE SI [J].

KEINONEN, J ;

HAUTALA, M ;

RAUHALA, E ;

KARTTUNEN, V ;

KURONEN, A ;

RAISANEN, J ;

LAHTINEN, J ;

VEHANEN, A ;

PUNKKA, E ;

HAUTOJARVI, P .

PHYSICAL REVIEW B, 1988, 37 (14) :8269-8277

[5] INVESTIGATION OF MICROPORES IN AMORPHOUS HYDROGENATED CARBON BY A PULSED POSITRON BEAM [J].

KOGEL, G ;

SCHODLBAUER, D ;

TRIFTSHAUSER, W ;

WINTER, J .

PHYSICAL REVIEW LETTERS, 1988, 60 (15) :1550-1553

[6] VARIABLE-ENERGY POSITRON-BEAM STUDIES OF NI IMPLANTED WITH HE [J].

LYNN, KG ;

CHEN, DM ;

NIELSEN, B ;

PAREJA, R ;

MYERS, S .

PHYSICAL REVIEW B, 1986, 34 (03) :1449-1458

[7] POSITRON DIFFUSION IN SI [J].

NIELSEN, B ;

LYNN, KG ;

VEHANEN, A ;

SCHULTZ, PJ .

PHYSICAL REVIEW B, 1985, 32 (04) :2296-2301

[8] MICROVOIDS AT THE SIO2/SI INTERFACE [J].

NIELSEN, B ;

LYNN, KG ;

WELCH, DO ;

LEUNG, TC ;

RUBLOFF, GW .

PHYSICAL REVIEW B, 1989, 40 (02) :1434-1437

[9] SHALLOW POSITRON TRAPS IN GAAS [J].

SAARINEN, K ;

HAUTOJARVI, P ;

VEHANEN, A ;

KRAUSE, R ;

DLUBEK, G .

PHYSICAL REVIEW B, 1989, 39 (08) :5287-5296

[10] INTERACTION OF POSITRON BEAMS WITH SURFACES, THIN-FILMS, AND INTERFACES [J].

SCHULTZ, PJ ;

LYNN, KG .

REVIEWS OF MODERN PHYSICS, 1988, 60 (03) :701-779

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