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DETERMINATION OF MOLE FRACTION OF GAP IN GAASP SINGLE CRYSTAL BY A NEW X-RAY DIFFRACTION TECHNIQUE
被引:9
作者
:
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
KISHINO, S
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1971年
/ 10卷
/ 08期
关键词
:
D O I
:
10.1143/JJAP.10.1113
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1113 / &
相关论文
共 7 条
[1]
STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
ABRAHAMS, MS
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
WEISBERG, LR
;
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
TIETJEN, JJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
:3754
-&
[2]
ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
[J].
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
HERZOG, AH
;
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
GROVES, WO
;
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
CRAFORD, MG
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(04)
:1830
-&
[3]
COMPOSITIONAL X-RAY TOPOGRAPHY
[J].
HOWARD, JK
论文数:
0
引用数:
0
h-index:
0
HOWARD, JK
;
DOBROTT, RD
论文数:
0
引用数:
0
h-index:
0
DOBROTT, RD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(06)
:567
-&
[4]
PREPARATION OF SOLID SOLUTIONS OF GAP AND GAAS BY A GAS PHASE REACTION
[J].
PIZZARELLO, FA
论文数:
0
引用数:
0
h-index:
0
PIZZARELLO, FA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(03)
:226
-229
[5]
PREPARATION OF HOMOGENEOUS AND REPRODUCIBLE SOLID SOLUTIONS OF GAP-GAAS
[J].
RUBENSTEIN, M
论文数:
0
引用数:
0
h-index:
0
RUBENSTEIN, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
:426
-+
[6]
SANMEIKU, 1963, J ELECTROCHEM SOC, V110, P991
[7]
EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES
[J].
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill
SAUL, RH
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
:3273
-&
←
1
→
共 7 条
[1]
STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
ABRAHAMS, MS
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
WEISBERG, LR
;
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
TIETJEN, JJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
:3754
-&
[2]
ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
[J].
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
HERZOG, AH
;
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
GROVES, WO
;
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
CRAFORD, MG
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(04)
:1830
-&
[3]
COMPOSITIONAL X-RAY TOPOGRAPHY
[J].
HOWARD, JK
论文数:
0
引用数:
0
h-index:
0
HOWARD, JK
;
DOBROTT, RD
论文数:
0
引用数:
0
h-index:
0
DOBROTT, RD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(06)
:567
-&
[4]
PREPARATION OF SOLID SOLUTIONS OF GAP AND GAAS BY A GAS PHASE REACTION
[J].
PIZZARELLO, FA
论文数:
0
引用数:
0
h-index:
0
PIZZARELLO, FA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(03)
:226
-229
[5]
PREPARATION OF HOMOGENEOUS AND REPRODUCIBLE SOLID SOLUTIONS OF GAP-GAAS
[J].
RUBENSTEIN, M
论文数:
0
引用数:
0
h-index:
0
RUBENSTEIN, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
:426
-+
[6]
SANMEIKU, 1963, J ELECTROCHEM SOC, V110, P991
[7]
EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES
[J].
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill
SAUL, RH
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
:3273
-&
←
1
→