METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF LITHIUM-DOPED ZNS

被引：14

作者：

MITSUISHI, I

SHIBATANI, J

KAO, MH

YAMAMOTO, M

YOSHINO, J

KUKIMOTO, H

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 05期

关键词：

Acceptor-bound exciton; Doping; Metalorganic vapor phase epitaxy; Photoluminescence; Type; ZnS;

D O I：

10.1143/JJAP.29.L733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lithium-doped ZnS epitaxial layers have been grown on GaAs substrates by metalorganic vapor phase epitaxy, using cyclopentadienyllithium as the dopant. Low-temperature photoluminescence spectra have shown the presence of lithium acceptors in the grown layers. The electrical resistivity decreased with increasing sublimation temperature of lithium dopant. The lowest resistivity achieved was about 4×102 Ω·cm and the highest p-type carrier concentration was 7.5×1015 cm-3. © 1990 The Japan Society of Applied Physics.

引用

页码：L733 / L735

页数：3

共 6 条

[1] PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS [J].