EFFECTS OF LATTICE MISMATCH ON CRYSTALLOGRAPHIC PROPERTIES OF ZNS GROWN ON GAP AND GAAS BY MOCVD

被引：18

作者：

MITSUISHI, I ^{[1
]}

MITSUHASHI, H ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 01期

关键词：

D O I：

10.1143/JJAP.27.L15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L15 / L17

页数：3

共 9 条

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[9] LOW RESISTIVITY AL-DOPED ZNS GROWN BY MOVPE [J].

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