ELECTRICAL AND OPTICAL-PROPERTIES OF DONOR DOPED ZNS FILMS GROWN BY LOW-PRESSURE MOCVD

The growth and properties of donor impurity doped ZnS films prepared using low-pressure MOCVD have been examined. Trimethylaluminum (TMAI) and hydrogenchloride (HCl) were used as donor dopant sources. With Al doping, ZnS films, with resistivities as low as about 1 OMEGA cm, can be grown. In the photoluminescence of Al-doped ZnS, a near-band-edge emission and an SA emission are observed. A correlation between the resistivity and the SA emission intensity was found through which the resistivity decreases with an increase in the SA emission intensity. With Cl doping, films with resistivity as low as 0. 2 OMEGA cm can be grown. It was found, however, that when the HCl flow rate was relatively high, the crystallinity tended to be poor, because of the reaction between HCl and the Zn-source material.