VPE GROWTH OF ZNS INCORPORATING INDIUM ON GAP

被引：10

作者：

GOTO, H

ZHOU, J

SAWAKI, N

AKASAKI, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 07期

关键词：

D O I：

10.1143/JJAP.25.1036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1036 / 1039

页数：4

共 14 条

[1] HETEROEPITAXIAL GROWTH OF ZNS ON GAP [J].

BERTOTI, I ;

FARKASJA.M ;

LENDVAY, E ;

NEMETH, T .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (08) :699-&

[2] EFFECT OF BYPASS FLOWS ON HETEROEPITAXIAL GROWTH OF ZNS ON GAP [J].

CUNNINGHAM, DJ ;

LILLEY, P .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :372-376

[3] GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FUJITA, S ;

TOMOMURA, Y ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09) :L583-L585

[4]

HOOGENSTRAATEN W, 1958, PHILIPS RES REP, V13, P597

[5]

HOOGENSTRAATEN W, 1958, PHILIPS RES REP, V13, P552

[6] HETEROEPITAXIAL GROWTH OF ZNS ON GAP BY THE CLOSE-SPACED TECHNIQUE [J].

KITAGAWA, M ;

SARAIE, J ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :198-203

[7] VAPOR-PHASE EPITAXIAL-GROWTH OF ZNS ON GAP [J].

MATSUDA, N ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :192-197

[8] NEW EMISSION BAND IN SELF-ACTIVATED ZNS [J].

ODA, S ;

KUKIMOTO, H .

JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) :829-832

[9] THE LUMINESCENT CENTER IN SELF-ACTIVATED ZNS PHOSPHORS [J].

PRENER, JS ;

WEIL, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (05) :409-414

[10]

SHIONOYA S, 1966, LUMINESCENCE INORGAN, P206

← 1 2 →