RESONANT INDIRECT FOWLER-NORDHEIM TUNNELING IN AL0.8GA0.2AS BARRIER

被引：4

作者：

LU, SS

LEE, K

NATHAN, MI

WRIGHT, SL

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV KOREA,DEPT ELECT ENGN,SEOUL,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oscillatory current-voltage characteristics of n+-GaAs/semi-insulating Al0.8Ga0.2As/nGaAs heterojunction barriers (400 angstrom thick) grown by molecular beam epitaxy on n+-GaAs (100) substrates are observed at 4 K when the heterostructures are placed under the transverse uniaxial stress along [011] direction (perpendicular to current direction) above 4 kbar. We attribute these oscillations to the resonant indirect Fowler-Nordheim tunneling via [011] oriented transverse X valleys, where the change of wave vector is required for tunneling.

引用

页码：266 / 268

页数：3

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