ELECTRONIC-PROPERTIES OF THE IRON-BORON IMPURITY PAIR IN SILICON

被引:20
作者
ASSALI, LVC
LEITE, JR
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词
D O I
10.1103/PhysRevB.36.1296
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1296 / 1299
页数:4
相关论文
共 19 条
[1]  
AMMERLAAN CAJ, 1985, MATERIALS RES SOC S, V46, P525
[2]   THEORETICAL-MODEL OF THE AU-FE COMPLEX IN SILICON [J].
ASSALI, LVC ;
LEITE, JR ;
FAZZIO, A .
PHYSICAL REVIEW B, 1985, 32 (12) :8085-8091
[3]  
BUNIN MA, 1983, SOV PHYS SEMICOND+, V17, P1291
[4]   METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J].
CHANTRE, A ;
BOIS, D .
PHYSICAL REVIEW B, 1985, 31 (12) :7979-7988
[5]  
Chantre A., 1986, Materials Science Forum, V10-12, P387, DOI 10.4028/www.scientific.net/MSF.10-12.387
[6]   CHROMIUM AND CHROMIUM-BORON PAIRS IN SILICON [J].
CONZELMANN, H ;
GRAFF, K ;
WEBER, ER .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (03) :169-175
[7]   THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].
DELEO, GG ;
WATKINS, GD ;
FOWLER, WB .
PHYSICAL REVIEW B, 1981, 23 (04) :1851-1858
[8]  
FEICHTINGER H, 1985, J ELECTRON MATER A, V14, P855
[9]   ELECTRON-PARAMAGNETIC-RES OF IRON-BORON CENTERS IN SILICON [J].
GEHLHOFF, W ;
SEGSA, KH .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 115 (02) :443-453
[10]   THE PROPERTIES OF IRON IN SILICON [J].
GRAFF, K ;
PIEPER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674