EPITAXIAL FILMS OF GERMANIUM DEPOSITED ON SAPPHIRE VIA CHEMICAL VAPOR TRANSPORT

被引：16

作者：

TRAMPOSCH, RF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 05期

关键词：

D O I：

10.1149/1.2412000

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：654 / +

页数：1

共 13 条

[1]

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APPLIED PHYSICS LETTERS, 1966, 8 (07) :164-&

[3] EPITAXIAL GROWTH OF GERMANIUM ON SINGLE CRYSTAL SPINEL [J].

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[4] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

DUMIN, DJ ;

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[5]

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[7] GAS PHASE ETCHING OF SAPPHIRE WITH SULFUR FLUORIDES [J].

MANASEVIT, HM ;

MORRITZ, FL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :204-+

[8] VACUUM-DEPOSITED GERMANIUM FILMS ON POLYCRYSTALLINE AI2O3 SUBSTRATES [J].

MCKINNON, MC ;

MACIVER, BA .

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[9]

MENDELSON S, 1964, SINGLE CRYSTAL FILMS, P251

[10] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J].

NICOLL, FH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) :1165-1167

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