AUGER COEFFICIENT GAP(ZN,O) .1. EVALUATION FROM LUMINESCENCE DECAY

被引：19

作者：

NEUMARK, GF ^{[1
]}

DEBITETTO, DJ ^{[1
]}

BHARGAVA, RN ^{[1
]}

HARNACK, PM ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.15.3147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3147 / 3155

页数：9

共 36 条

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[4]

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ERMANIS, F ;

WOLFSTIRN, KB .

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[7] RECOMBINATION KINETICS OF ELECTRONS AND HOLES AT ISOELECTRONIC IMPURITIES - GAP(ZN,O) [J].

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DIDOMENI.M .

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[8] LIMINESCENCE TIME-RESPONSE MEASUREMENTS AND STRENGTH OF HOLE CAPTURE AT ZN-O IMPURITY COMPLEX IN GAP [J].

DISHMAN, JM ;

CAMLIBEL, I .

PHYSICAL REVIEW B, 1972, 6 (04) :1340-&

[9] MINORITY-CARRIER TRAPPING AND LUMINESCENCE TIME RESPONSE OF SEMICONDUCTORS [J].

DISHMAN, JM .

PHYSICAL REVIEW B, 1972, 6 (04) :1337-&

[10] CHARACTERIZATION OF DOMINANT RECOMBINATION CENTERS IN SEMICONDUCTORS FROM TEMPERATURE DEPENDENCE OF LUMINESCENCE EXCITATION-SPECTRA - GAP(ZN,O) [J].

DISHMAN, JM .

PHYSICAL REVIEW B, 1972, 5 (06) :2258-&

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