EFFECTS OF CRYSTALLOGRAPHIC ORIENTATION ON MOBILITY SURFACE STATE DENSITY AND NOISE IN P-TYPE INVERSION LAYERS ON OXIDIZED SILICON SURFACES

被引：110

作者：

SATO, T

TAKEISHI, Y

HARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 05期

关键词：

D O I：

10.1143/JJAP.8.588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：588 / +

页数：1

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