ROOM-TEMPERATURE OPERATION OF GA0.47IN0.53AS/AL0.48IN0.52AS RESONANT TUNNELING DIODES

被引：13

作者：

SEN, S

CAPASSO, F

HUTCHINSON, AL

CHO, AY

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 23期

关键词：

SEMICONDUCTOR DIODES - Tunneling;

D O I：

10.1049/el:19870856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature operation of Ga//0//. //4//7 In//0//. //5//3As/Al//0//. //4//8In//0//. //5//2As resonant tunnelling (RT) diodes is reported. The peak/valley ratio of the current is as high as 4:1 at room temperature and is 15:1 at 80K. The position of the peak in the current/voltage characteristic showed good agreement with that obtained from an electron tunnelling transmission calculation.

引用

页码：1229 / 1231

页数：3

共 16 条

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[15]

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[16]

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