SPIN SUSCEPTIBILITY AND EFFECTIVE MASS IN SHALLOW DOUBLY DOPED SEMICONDUCTOR SYSTEMS

被引：6

作者：

DASILVA, AF ^{[1
]}

机构：

[1] UNIV FED BAHIA,INST FIS,BR-40210 SALVADOR,BA,BRAZIL

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.43.6551

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In light of a recent investigation of the conductivity and metal-insulator transition in the shallow double donor Si:P,As, the spin susceptibility chi-s and effective mass m* of the systems Si:P,As and Si:P,Sb have been calculated. The electronic systems are described by a Gutzwiller scheme to finite temperature. The results for the doubly doped systems predict an enhancement of m* and chi-s similar to that of the single-donor system Si:P in the vicinity of the transition.

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页码：6551 / 6553

页数：3

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