SPIN SUSCEPTIBILITY AND EFFECTIVE MASS IN SHALLOW DOUBLY DOPED SEMICONDUCTOR SYSTEMS

In light of a recent investigation of the conductivity and metal-insulator transition in the shallow double donor Si:P,As, the spin susceptibility chi-s and effective mass m* of the systems Si:P,As and Si:P,Sb have been calculated. The electronic systems are described by a Gutzwiller scheme to finite temperature. The results for the doubly doped systems predict an enhancement of m* and chi-s similar to that of the single-donor system Si:P in the vicinity of the transition.