HOLE GENERATION BY ICOSAHEDRAL B-12 IN HIGH-DOSE BORON AS-IMPLANTED SILICON

被引：43

作者：

MIZUSHIMA, I ^{[1
]}

WATANABE, M ^{[1
]}

MURAKOSHI, A ^{[1
]}

HOTTA, M ^{[1
]}

KASHIWAGI, M ^{[1
]}

YOSHIKI, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,ENVIRONM ENGN LAB,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was found that a high concentration of holes was generated without any post-annealing by boron ion implantation into silicon in the high-dose region of more than 1 X 10(16) cm-2. X-ray photoelectron spectroscopy and Fourier transform infrared absorption spectrum revealed that B-12 icosahedra were created just after implantation. The generation of holes can be explained by the model in which B-12 icosahedra act as a double acceptor.

引用

页码：373 / 375

页数：3

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