FORMATION OF CUBIC GAN ON (111)B GAAS BY METAL-ORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE

被引：12

作者：

KUWANO, N

KOBAYASHI, K

OKI, K

MIYOSHI, S

YAGUCHI, H

ONABE, K

SHIRAKI, Y

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

[2] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 6A期

关键词：

CUBIC GAN; TRANSMISSION ELECTRON MICROSCOPY; GAAS SUBSTRATE; METAL-ORGANIC VAPOR-PHASE EPITAXY; DIMETHYLHYDRAZINE; DEPOSIT ON (111)B; STACKING FAULT; HETEROINTERFACE;

D O I：

10.1143/JJAP.33.3415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of GaN grown on (111)B GaAs by a metal-orgnic vapor-phase epitaxy method has been examined by transmission electron microscopy. Trimethylgallium and dimethylhydrazine were used as the source materials. It was revealed that the GaN crystal has a zincblende structure and is formed heterogeneously penetrating into the GaAs substrate. In a GaN crystal, stacking faults propagate on (111) planes other than those normal to the growth direction.

引用

页码：3415 / 3416

页数：2

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