ESCA AND SEXAFS INVESTIGATIONS OF INSULATING MATERIALS FOR ULSI MICROELECTRONICS

被引:90
作者
FINSTER, J [1 ]
KLINKENBERG, ED [1 ]
HEEG, J [1 ]
BRAUN, W [1 ]
机构
[1] BESSY GMBH,W-1000 BERLIN,GERMANY
关键词
D O I
10.1016/0042-207X(90)94025-L
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the aim to improve the knowledge about the geometric and electronic structure and their interdependence with other important properties, we investigated insulating materials of current interest for ULSI microelectronics (SiO2, Si3N4, SiO(x)Ny) with XPS/AES and XANES/EXAFS in the electron yield mode. A number of reference compounds (alpha-quartz, stishovite, a - Si3N4, c-Si2N2O) were characterized and used to derive standard spectra or data; SiO(x)N(y) samples were compared with them. With growing oxygen content in the oxynitrides, the BE of Si core levels increases continuously manifesting a random bonding structure. The N s-BE and the extra-atomic relaxation energy DELTA-R (derived from the Auger parameter) remain almost constant showing the dominance of the Si3N4 network structure as long as the oxygen content is not too high. The metastable, high pressure SiO2 modification stishovite preserves its 6:3 co-ordination also after irradiation with X-rays.
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收藏
页码:1586 / 1589
页数:4
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