STRUCTURAL AND ELECTRICAL-PROPERTIES OF (TI0.9ZR0.1)SI-2 THIN-FILMS ON SI(111)

Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of similar to 600 degrees C, the films form the C49 phase and are stable in this phase up to at least 910 degrees C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at similar to 700 degrees C. The surfaces of the (Ti0.9Zr0.1)Si-2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910 degrees C. The sheet resistivity of the (Ti0.9Zr0.1)Si-2 alloy films is found to be similar to 46 mu Omega cm for annealing temperatures from 600 to 910 degrees C. (C) 1994 American Institute of Physics.