INFLUENCE OF PREPARATION CONDITIONS ON MAGNETIC-PROPERTIES AND AGING BEHAVIOR OF RF DIODE SPUTTERED GDTBCO FILMS

被引：12

作者：

HEITMANN, H

HARTMANN, M

KLAHN, S

ROSENKRANZ, M

TOLLE, HJ

WILLICH, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.338788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：3331 / 3333

页数：3

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共 20 条

[1] INFLUENCE OF INERT-GAS INCORPORATION ON UNIAXIAL ANISOTROPY OF SPUTTERED GDCO THIN-FILMS
BURILLA, CT
BEKEBREDE, WR
KESTIGIAN, M
SMITH, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1750 - 1752
[2] DIPOLAR MECHANISMS FOR MAGNETIC-ANISOTROPY IN AMORPHOUS FERRIMAGNETIC ALLOYS
CARGILL, GS
MIZOGUCHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1753 - 1755
[3] SPUTTERING-INDUCED RECRYSTALLIZATION ON THE TARGET AND ITS EFFECT ON MAGNETIC-PROPERTIES OF AMORPHOUS RARE-EARTH TRANSITION-METAL THIN-FILMS
CHEN, T
MALMHALL, R
CHARLAN, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 2356 - 2358
[4] CUOMO JJ, 1977, J VAC SCI TECHNOL, V14, P152, DOI 10.1116/1.569109
[5] INFLUENCE OF SPUTTERING PARAMETERS ON COMPOSITION OF MULTICOMPONENT FILMS
CUOMO, JJ
GAMBINO, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 79 - 83
[6] ESHO S, 1976, AIP C P, V34, P331
[7] SELECTIVE RESPUTTERING INDUCED ANISOTROPY IN AMORPHOUS FILMS
GAMBINO, RJ
CUOMO, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 296 - 301
[8] AMORPHOUS RARE EARTH-TRANSITION METAL-FILMS FOR MAGNETOOPTICAL STORAGE
HEITMANN, H
HARTMANN, M
ROSENKRANZ, M
TOLLE, HJ
[J]. JOURNAL DE PHYSIQUE, 1985, 46 (C-6): : 9 - 18
[9] AGING EFFECTS ON AMORPHOUS TB-TRANSITION-METAL FILMS PREPARED BY DIODE AND MAGNETRON SPUTTERING
HONG, M
BACON, DD
VANDOVER, RB
GYORGY, EM
DILLON, JF
ALBISTON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 3900 - 3902
[10] DC MAGNETRON-SPUTTERED AND DIODE-SPUTTERED POLYCRYSTALLINE FE AND AMORPHOUS TB(FECO) FILMS - MORPHOLOGY AND MAGNETIC-PROPERTIES
HONG, M
GYORGY, EM
VANDOVER, RB
NAKAHARA, S
BACON, DD
GALLAGHER, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 551 - 556