MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON WITH BURIED IMPLANTED OXIDES

被引：2

作者：

DAS, K

HUMPHREYS, TP

WORTMAN, JJ

POSTHILL, JB

TARN, JCL

PARIKH, N

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 01期

关键词：

D O I：

10.1049/el:19880045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 68

页数：2

共 13 条

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[7]

SINGER PH, 1987, SEMICONDUCTOR IN APR, P71

[8] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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MUNOZYAGUE, A .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1146-1148

[9] LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES [J].

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ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :587-589

[10] MESFETS ON A GAAS-ON-INSULATOR STRUCTURE [J].

TSUTSUI, K ;

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FURUKAWA, S .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :277-279

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