MESFETS ON A GAAS-ON-INSULATOR STRUCTURE

被引：9

作者：

TSUTSUI, K

NAKAZAWA, T

ASANO, T

ISHIWARA, H

FURUKAWA, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 06期

关键词：

D O I：

10.1109/EDL.1987.26629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：277 / 279

页数：3

共 13 条

[1] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J].

ASANO, T ;

ISHIWARA, H ;

LEE, HC ;

TSUTSUI, K ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L139-L141

[2]

EINSPRUCH NG, 1982, VLSI ELECTRONICS MIC, V4

[3]

ISHIWARA H, 1983, JPN J APPL PHYS S1, V22, P201

[4]

ISHIWARA H, 1982, 14TH P C SOL STAT DE

[5]

PHILLIPS JM, 1985, P MATER RES SOC, V25, P381

[6] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SISKOS, S ;

FONTAINE, C ;

MUNOZYAGUE, A .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1146-1148

[7] GROWTH OF SEMICONDUCTOR INSULATOR STRUCTURES - GAAS/FLUORIDE/GAAS (001) [J].

SULLIVAN, PW ;

BOWER, JE ;

METZE, GM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :500-507

[8] ANTIPHASE DISORDER IN EPITAXIAL GAAS FILMS GROWN ON CAXSR1-XF2(100) WITH HIGHER CRYSTALLOGRAPHIC SYMMETRY [J].

TSUTSUI, K ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1705-1707

[9] LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES [J].

TSUTSUI, K ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :587-589

[10] EPITAXIAL RELATIONS IN CAXSR1-XF2 FILMS GROWN ON GAAS (111) AND GE(111) SUBSTRATES [J].

TSUTSUI, K ;

ISHIWARA, H ;

ASANO, T ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1131-1133

← 1 2 →