ANTIPHASE DISORDER IN EPITAXIAL GAAS FILMS GROWN ON CAXSR1-XF2(100) WITH HIGHER CRYSTALLOGRAPHIC SYMMETRY

被引：10

作者：

TSUTSUI, K

ISHIWARA, H

FURUKAWA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 25期

关键词：

D O I：

10.1063/1.97221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1705 / 1707

页数：3

共 13 条

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[6]

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