CHARACTERIZATION OF GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI-ON-INSULATOR

被引：6

作者：

PEARTON, SJ ^{[1
]}

VERNON, SM ^{[1
]}

SHORT, KT ^{[1
]}

BROWN, JM ^{[1
]}

ABERNATHY, CR ^{[1
]}

CARUSO, R ^{[1
]}

CHU, SNG ^{[1
]}

HAVEN, VE ^{[1
]}

BUNKER, SN ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期

关键词：

D O I：

10.1063/1.98728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1188 / 1190

页数：3

共 11 条

[1]

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[3]

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[4] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

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[5] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311

[6] CHARACTERIZATION OF GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PEARTON, SJ ;

VERNON, SM ;

ABERNATHY, CR ;

SHORT, KT ;

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JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :862-867

[7] LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF DEVICE QUALITY GAAS DIRECTLY ON (100) SI [J].

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ZEMON, S .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :467-469

[8] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI [J].

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METZE, GM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :535-536

[9] ACTIVATION CHARACTERISTICS AND DEFECT STRUCTURE IN SI-IMPLANTED GAAS-ON-SI [J].

VERNON, SM ;

PEARTON, SJ ;

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SHORT, KT ;

HAVEN, VE .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1161-1163

[10] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS ON SI FOR SOLAR-CELL APPLICATIONS [J].

VERNON, SM ;

HAVEN, VE ;

TOBIN, SP ;

WOLFSON, RG .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :530-538

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