A REAL-INDEX GUIDED INGAALP VISIBLE LASER DIODE WITH A SMALL BEAM ASTIGMATISM

被引：8

作者：

OKAJIMA, M

WATANABE, Y

NISHIKAWA, Y

ITAYA, K

HATAKOSHI, G

UEMATSU, Y

机构：

[1] Research and Development Center, Toshiba Corp, Saiwai-Ku, Kawasaki

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.89968

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel real-index guided InGaAlP visible laser diode with a small beam astigmatism has been developed. The laser is characterized by a slab-coupled waveguide structure with self-aligned current confinement. The laser was fabricated with a two-step metalorganic chemical vapor deposition process. The laser exhibited stable fundamental transverse mode oscillation with a threshold current as low as 40 mA and a lasing wavelength of 670 nm. As a result of real-index guiding, a small beam astigmatism less than 2-mu-m has been achieved. The laser exhibited a stable operation for 2000 hours under 3 mW at 30-degrees-C.

引用

页码：1491 / 1495

页数：5

共 16 条

[11] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].