共 17 条
MESA WAVE-GUIDE GAAS-GAALAS INJECTION-LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
被引:14
作者:

SCIFRES, DR
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h-index: 0

BURNHAM, RD
论文数: 0 引用数: 0
h-index: 0

STREIFER, W
论文数: 0 引用数: 0
h-index: 0
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关键词:
D O I:
10.1063/1.92180
中图分类号:
O59 [应用物理学];
学科分类号:
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页码:915 / 917
页数:3
相关论文
共 17 条
[1]
TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE
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AIKI, K
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IEEE JOURNAL OF QUANTUM ELECTRONICS,
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AIKI, K
论文数: 0 引用数: 0
h-index: 0

NAKAMURA, M
论文数: 0 引用数: 0
h-index: 0

KURODA, T
论文数: 0 引用数: 0
h-index: 0

UMEDA, J
论文数: 0 引用数: 0
h-index: 0

ITO, R
论文数: 0 引用数: 0
h-index: 0

CHINONE, N
论文数: 0 引用数: 0
h-index: 0

MAEDA, M
论文数: 0 引用数: 0
h-index: 0
[2]
ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS
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BURNHAM, RD
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SCIFRES, DR
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APPLIED PHYSICS LETTERS,
1975, 27 (09)
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BURNHAM, RD
论文数: 0 引用数: 0
h-index: 0
机构:
PALO ALTO RES CTR,PALO ALTO,CA 94304 PALO ALTO RES CTR,PALO ALTO,CA 94304

SCIFRES, DR
论文数: 0 引用数: 0
h-index: 0
机构:
PALO ALTO RES CTR,PALO ALTO,CA 94304 PALO ALTO RES CTR,PALO ALTO,CA 94304
[3]
NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER
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BURNHAM, RD
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APPLIED PHYSICS LETTERS,
1979, 35 (10)
:734-736

BURNHAM, RD
论文数: 0 引用数: 0
h-index: 0
机构: Xerox Palo Alto Research Center, Palo Alto

SCIFRES, DR
论文数: 0 引用数: 0
h-index: 0
机构: Xerox Palo Alto Research Center, Palo Alto

STREIFER, W
论文数: 0 引用数: 0
h-index: 0
机构: Xerox Palo Alto Research Center, Palo Alto

PELED, S
论文数: 0 引用数: 0
h-index: 0
机构: Xerox Palo Alto Research Center, Palo Alto
[4]
PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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DUPUIS, RD
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IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979, 15 (03)
:128-135

DUPUIS, RD
论文数: 0 引用数: 0
h-index: 0

DAPKUS, PD
论文数: 0 引用数: 0
h-index: 0
[5]
CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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DUPUIS, RD
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DAPKUS, PD
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APPLIED PHYSICS LETTERS,
1978, 32 (07)
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DUPUIS, RD
论文数: 0 引用数: 0
h-index: 0

DAPKUS, PD
论文数: 0 引用数: 0
h-index: 0
[6]
SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL-GUIDE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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APPLIED PHYSICS LETTERS,
1978, 33 (08)
:724-726

DUPUIS, RD
论文数: 0 引用数: 0
h-index: 0

DAPKUS, PD
论文数: 0 引用数: 0
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[7]
GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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APPLIED PHYSICS LETTERS,
1977, 31 (12)
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DUPUIS, RD
论文数: 0 引用数: 0
h-index: 0

DAPKUS, PD
论文数: 0 引用数: 0
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[8]
CURVED JUNCTION STABILIZED FILAMENT (CJS']JSF) DOUBLE-HETEROSTRUCTURE INJECTION-LASER
[J].
FIGUEROA, L
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APPLIED PHYSICS LETTERS,
1978, 32 (01)
:55-57

FIGUEROA, L
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF BERKELEY,ELECTR SECT,BERKELEY,CA 94720 UNIV CALIF BERKELEY,ELECTR SECT,BERKELEY,CA 94720

WANG, S
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF BERKELEY,ELECTR SECT,BERKELEY,CA 94720 UNIV CALIF BERKELEY,ELECTR SECT,BERKELEY,CA 94720
[9]
CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS
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KIRKBY, PA
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ELECTRONICS LETTERS,
1979, 15 (25)
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KIRKBY, PA
论文数: 0 引用数: 0
h-index: 0
机构: Standard Telecommunication Laboratories Ltd., Harlow, Essex, London Road
[10]
CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS
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KIRKBY, PA
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JOURNAL OF APPLIED PHYSICS,
1976, 47 (10)
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KIRKBY, PA
论文数: 0 引用数: 0
h-index: 0
机构:
STAND TELECOMMUN LABS LTD, HARLOW CM17 9NA, ESSEX, ENGLAND STAND TELECOMMUN LABS LTD, HARLOW CM17 9NA, ESSEX, ENGLAND

THOMPSON, GHB
论文数: 0 引用数: 0
h-index: 0
机构:
STAND TELECOMMUN LABS LTD, HARLOW CM17 9NA, ESSEX, ENGLAND STAND TELECOMMUN LABS LTD, HARLOW CM17 9NA, ESSEX, ENGLAND