FORWARD CHARACTERISTICS AND EFFICIENCIES OF SILICON SOLAR CELLS

被引：41

作者：

QUEISSER, HJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1962年 / 5卷 / JAN-F期

关键词：

D O I：

10.1016/0038-1101(62)90012-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 10

页数：10

共 32 条

[1]

[Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[2]

AZIZOV M, 1960, IAN UZB SSR FIZ MAT, V2, P78

[3]

BAKER A, 1957, IRE M DENVER

[4] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1956, 103 (03) :567-569

[5] GOLD IN SILICON [J].

BEMSKI, G ;

STRUTHERS, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) :588-591

[6] A NEW SILICON P-N JUNCTION PHOTOCELL FOR CONVERTING SOLAR RADIATION INTO ELECTRICAL POWER [J].

CHAPIN, DM ;

FULLER, CS ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) :676-677

[7] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 106 (03) :418-426

[8] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[9] IMPROVEMENTS ON THE PEDESTAL METHOD OF GROWING SILICON AND GERMANIUM CRYSTALS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) :736-737

[10] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

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