USE OF L1L2,3V AUGER TRANSITIONS FOR AN ELECTRONIC-STRUCTURE STUDY OF THE AL-SI(111)-(2X1) INTERFACE

被引：9

作者：

KOBAYASHI, KLI ^{[1
]}

SHIRAKI, Y ^{[1
]}

GERKEN, F ^{[1
]}

BARTH, J ^{[1
]}

机构：

[1] DESY,D-2000 HAMBURG 52,FED REP GER

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.24.3575

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3575 / 3578

页数：4

共 12 条

[1]

CHERIKOVSKY JR, 1977, PHYS REV B, V16, P3618

[2] L1L2,3V AUGER TRANSITION IN SI [J].

FERRER, S ;

BARO, AM ;

SALMERON, M .

SOLID STATE COMMUNICATIONS, 1975, 16 (05) :651-653

[3]

KOBAYASHI K, UNPUBLISHED

[4]

KOBAYASHI KLI, 1980, J PHYS SOC JPN, V49, P1063

[5]

KOBAYASHI KLI, SOLID STATE COMMUN

[6] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469

[7] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING [J].

MARGARITONDO, G ;

ROWE, JE ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1976, 14 (12) :5396-5403

[8]

MONCH W, 1973, FESTKORPERPROBLEME, V13, P241

[9] ELECTRONIC STATES FOR THE AL OVERLAYER ON THE SI(111) SURFACE [J].

NISHIDA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 95 (01) :263-272

[10] INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110) [J].

SKEATH, P ;

LINDAU, I ;

CHYE, PW ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1143-1148

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