ENHANCED ELIMINATION OF IMPLANTATION DAMAGE UPON EXCEEDING THE SOLID SOLUBILITY

被引：34

作者：

JONES, KS

PRUSSIN, S

WEBER, ER

机构：

[1] TRW,ELECTR GRP,REDONDO BEACH,CA 90278

[2] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1063/1.339126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4114 / 4117

页数：4

共 20 条

[1] HREM OF SIP PRECIPITATES AT THE (111) SILICON SURFACE DURING PHOSPHORUS PREDEPOSITION
BOURRET, A
SCHROTER, W
[J]. ULTRAMICROSCOPY, 1984, 14 (1-2) : 97 - 106
[2] Frank W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P31
[3] FLASH - LAMP ANNEALING OF PHOSPHORUS AND ANTIMONY IMPLANTED SILICON
GAIDUK, PI
KOMAROV, FF
PILIPENKO, VA
SOLOVYEV, VS
STERZHANOV, NI
[J]. RADIATION EFFECTS LETTERS, 1984, 86 (06): : 213 - 222
[4] Gosele U., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P55
[5] STUDIES OF PUSH-OUT EFFECT IN SILICON .2. EFFECT OF PHOSPHORUS EMITTER DIFFUSION ON GALLIUM-BASE PROFILES, DETERMINED BY RADIOTRACER TECHNIQUES
JONES, CL
WILLOUGHBY, AFW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1531 - 1538
[6] JONES KS, 1986, 14TH P INT C DEF SEM, V10, P751
[7] JONES KS, 1987, LBL23180 U CAL REP
[8] MICHEL AE, 1986, P MATER RES SOC, V52, P3
[9] MIZUO S, 1985, MAT RES SOC S P, V36, P125
[10] Murray J, 1984, B ALLOY PHASE DIAGR, V5, P74, DOI DOI 10.1007/BF02868729