FLASH - LAMP ANNEALING OF PHOSPHORUS AND ANTIMONY IMPLANTED SILICON

被引：3

作者：

GAIDUK, PI

KOMAROV, FF

PILIPENKO, VA

SOLOVYEV, VS

STERZHANOV, NI

机构：

来源：

RADIATION EFFECTS LETTERS | 1984年 / 86卷 / 06期

关键词：

D O I：

10.1080/01422448408205225

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：213 / 222

页数：10

共 13 条

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OSTOJA, P .

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[2] MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

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GALLONI, R ;

NIPOTI, R .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :661-663

[3] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

CORRERA, L ;

PEDULLI, L .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :55-57

[4] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

[5]

GAIDUK PI, 1983, NIINTI608BED83 REP

[6]

GAIDUK PI, UNPUB RAD EFF LETT

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[8]

KACHURIN GA, 1977, FIZ TEKH POLUPROV, V11, P2012

[9]

KACHURIN GA, 1978, ZENTRALINST KERNFORS, V1, P91

[10] CRYSTALLOGRAPHIC NATURE AND FORMATION MECHANISMS OF HIGHLY IRREGULAR STRUCTURE IN IMPLANTED AND ANNEALED SI LAYERS [J].

KOMAROV, FF ;

SOLOVYEV, VS ;

SHIRYAYEV, SY .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4) :169-178

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