STUDIES OF PUSH-OUT EFFECT IN SILICON .2. EFFECT OF PHOSPHORUS EMITTER DIFFUSION ON GALLIUM-BASE PROFILES, DETERMINED BY RADIOTRACER TECHNIQUES

被引：14

作者：

JONES, CL ^{[1
]}

WILLOUGHBY, AFW ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,ENGN MAT LABS,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132632

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1531 / 1538

页数：8

相关论文

共 40 条

[1] ADLER RB, 1973, ATOMIC DIFFUSION SEM, P328
[2] PRE-PRECIPITATION OF PHOSPHORUS IN HEAVILY DOPED SILICON
BIEDERMAN, E
BOHG, A
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (10) : 457 - +
[3] BLANCHARD B, 1972, COMPTES RENDUS COLLO
[4] BOOTH RC, 1974, THESIS SOUTHAMPTON U
[5] PROPERTIES OF GOLD IN SILICON
BULLIS, WM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &
[6] EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (189): : 567 - &
[7] EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON
DUFFY, MC
BARSON, F
FAIRFIEL.JM
SCHWUTTK.GH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 84 - &
[8] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS
ELKIN, EL
WATKINS, GD
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 881 - &
[9] ALTERNATIVE RELATIONSHIP FOR CONVERTING INCREMENTAL SHEET RESISTIVITY MEASUREMENTS INTO PROFILES OF IMPURITY CONCENTRATION
EVANS, RA
DONOVAN, RP
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (02) : 155 - &
[10] EXPLANATION OF ANOMALOUS BASE REGIONS IN TRANSISTORS
FAIR, RB
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 186 - 187

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