RESEARCH OF SIO2/INP STRUCTURE PREPARED BY PHOTO-CVD

被引：13

作者：

HUANG, CJ

SU, YK

机构：

[1] Department of Electrical Engineering, National Cheng Kung University, Tainan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期

关键词：

photo-CVD of SiO[!sub]2[!/sub; SiO[!sub]2[!/sub]/InP;

D O I：

10.1007/BF02655245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The SiO2 film as an insulator in InP MOS structure was grown by mercury-sensitized photo induced chemical-vapor deposition (photo-CVD) utilizing gaseous mixture of monosilane (SiH4) and nitrous oxide (N4O) under 253.7 nm ultraviolet light irradiation. The PHOTOX SiO2 film (i.e., SiO2 film prepared by photo-CVD system) deposited at 250° C has a refractive index of 1.46 and breakdown field strength of 7.0 MV/cm. The 1 MHz capacitance-voltage characteristics of the InP MOS diode was measured to study the interface state densities. The minimum value is 1.2 × 1011 cm-2eV-1 for the sample prepared at a substrate temperature of 250° C. © 1990 The Mineral, Metal & Materials Society, Inc.

引用

页码：753 / 756

页数：4

共 18 条

[1] REDUCTION OF FAST INTERFACE STATES AND SUPPRESSION OF DRIFT PHENOMENA IN ARSENIC-STABILIZED METAL-INSULATOR-INP STRUCTURES [J].