ALUMINUM-DOPED ZINC-OXIDE TRANSPARENT CONDUCTORS DEPOSITED BY THE SOL-GEL PROCESS

被引：342

作者：

TANG, W

CAMERON, DC

机构：

[1] School of Electronic Engineering, Dublin City University, Dublin

来源：

THIN SOLID FILMS | 1994年 / 238卷 / 01期

关键词：

D O I：

10.1016/0040-6090(94)90653-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of transparent conducting aluminum-doped ZnO have been deposited using a sol-gel process. The dependence of electrical characteristics upon aluminum concentration in the films and upon post-deposition heat treatment in vacuum was examined. The effect of changing the aluminum-to-zinc ratio from 0% to 4.5% (atomic) and the heat treatment temperature in vacuum has been thoroughly investigated. Resistivities of (7-10) X 10(-4) OMEGA cm have been achieved for ZnO:Al films with Al/Zn ratios of 0.8 at.% heated to 450-degrees-C in vacuum. Transmittance in the visible region is above 900/o. Similar results were obtained using aluminum chloride and aluminum nitrate as the aluminum precursor.

引用

页码：83 / 87

页数：5

共 23 条

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