NITROGEN DOPING DURING GROWTH OF DISLOCATION-FREE FZ SILICON-CRYSTALS

被引：1

作者：

WOLF, E

SCHRODER, W

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 02期

关键词：

D O I：

10.1002/crat.2170220226

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：K21 / K22

页数：2

共 8 条

[1]

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[2]

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[5] EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS [J].

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IMAI, M ;

ABE, T .

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[6]

TOKUMARU Y, 1982, JAP J APPL PHYSICS, V21, P1443

[7] THE NATURE AND FORMATION MECHANISM OF ANOMALOUS DEFECTS IN DISLOCATION FREE FZ-SILICON CRYSTALS CAUSED BY HYDROGEN DOPING [J].

WOLF, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01) :K59-K61

[8] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON [J].

YATSURUGI, Y ;

AKIYAMA, N ;

ENDO, Y ;

NOZAKI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :975-979

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