ELECTRON-SPIN RESONANCE OF ULTRAHIGH-VACUUM EVAPORATED AMORPHOUS SILICON - INSITU AND EXSITU STUDIES

[1] ABRAGAM A, 1962, PRINCIPLES NUCLEAR M, P126

[2] AGARWAL SC, 1973, PHYS REV B, V7, P685

[3] ARIZUMI T, 1974, 5TH P INT C AM LIQ S, P1065

[4] Bahl S. K., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P69

[5] PROPERTIES OF AMORPHOUS SILICON FILMS - DEPENDENCE ON DEPOSITION RATE [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (08) : 1159 - 1163

[6] Barna A., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P109

[7] BLUZER N, 1974, 5TH P INT C AM LIQ S, P1209

[8] Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]

[9] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 125 - &

[10] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[1] ABRAGAM A, 1962, PRINCIPLES NUCLEAR M, P126

[2] AGARWAL SC, 1973, PHYS REV B, V7, P685

[3] ARIZUMI T, 1974, 5TH P INT C AM LIQ S, P1065

[4] Bahl S. K., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P69

[5] PROPERTIES OF AMORPHOUS SILICON FILMS - DEPENDENCE ON DEPOSITION RATE [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (08) : 1159 - 1163

[6] Barna A., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P109

[7] BLUZER N, 1974, 5TH P INT C AM LIQ S, P1209

[8] Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]

[9] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 125 - &

[10] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &