ELECTRICALLY ACTIVE DEFECTS IN LIQUID-PHASE EPITAXIAL INTERFACES IN THE IN0.53GA0.47AS/INP SYSTEM

The electrical properties of liquid phase epitaxial interfaces in the lattice-matched In//0//. //5//3Ga//0//. //4//7As/InP system were studied using C-V profiling and capacitance transient spectroscopy. The measurements indicate a high density of acceptor-like electron traps about 0. 10 ev below the conduction band in a highly localized region in the immediate vicinity of LPE n-In//0//. //5//3Ga//0//. //4//7As/N-InP isotype heterojunctions. The complete absence of these traps in the interface between two successively grown InP layers, and between two successively grown In//0//. //5//3Ga//0//. //4//7As layers indicates that the defects are formed during the initial stages of heteroepitaxy. Possible origins of this elecron trap are discussed.