IONIZED-IMPURITY SCATTERING IN THE STRONG-SCREENING LIMIT

被引：53

作者：

MEYER, JR

BARTOLI, FJ

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.36.5989

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5989 / 6000

页数：12

共 89 条

[1] COMPENSATION IN HEAVILY DOPED N-TYPE INP AND GAAS
ANDERSON, DA
APSLEY, N
DAVIES, P
GILES, PL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3059 - 3067
[2] ANTOSIEWICZ HA, 1964, NBS APPL MATH SER, V55, P435
[3] INTERBAND ELECTRON-ELECTRON SCATTERING AND TRANSPORT PHENOMENA IN SEMICONDUCTORS
APPEL, J
[J]. PHYSICAL REVIEW, 1962, 125 (06): : 1815 - &
[4] STATIC CONDUCTIVITY OF A HEAVILY DOPED SEMICONDUCTOR
ARBUZOV, YD
EVDOKIMOV, VM
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (02): : 579 - 583
[5] ARBUZOV YD, 1979, SOV PHYS-SOLID STATE, V22, P316
[6] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON
BACCARANI, G
OSTOJA, P
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580
[7] ELECTRON-MOBILITY IN LOW-TEMPERATURE HG1-XCDX TE UNDER HIGH-INTENSITY CO2-LASER EXCITATION
BARTOLI, FJ
MEYER, JR
HOFFMAN, CA
ALLEN, RE
[J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2248 - 2263
[8] BEER AC, 1963, GALVANOMAGNETIC EFFE, pCH12
[9] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT
BENNETT, HS
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166
[10] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS