III-V DEVICE TECHNOLOGIES FOR ELECTRONIC APPLICATIONS

被引：7

作者：

SHAH, NJ

PEI, SS

机构：

来源：

AT&T TECHNICAL JOURNAL | 1989年 / 68卷 / 01期

关键词：

D O I：

10.1002/j.1538-7305.1989.tb00643.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：19 / 28

页数：10

共 8 条

[1]

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[3] III-V DEVICE TECHNOLOGIES FOR LIGHTWAVE APPLICATIONS [J].

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[4] LIQUID AND VAPOR-PHASE GROWTH OF III-V MATERIALS FOR PHOTONIC DEVICES [J].

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[6] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

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[7]

PAHNISH MB, 1989, AT&T TECH J, V68, P43

[8] GATE-LENGTH DEPENDENCE OF THE SPEED OF SSI CIRCUITS USING SUBMICROMETER SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR TECHNOLOGY [J].

SHAH, NJ ;

PEI, SS ;

TU, CW ;

TIBERIO, RC .

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