LIQUID AND VAPOR-PHASE GROWTH OF III-V MATERIALS FOR PHOTONIC DEVICES

被引：9

作者：

JOHNSTON, WD

DIGIUSEPPE, MA

WILT, DP

机构：

来源：

AT&T TECHNICAL JOURNAL | 1989年 / 68卷 / 01期

关键词：

D O I：

10.1002/j.1538-7305.1989.tb00646.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：53 / 63

页数：11

共 12 条

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[5] III-V DEVICE TECHNOLOGIES FOR LIGHTWAVE APPLICATIONS [J].

DUTTA, NK .

AT&T TECHNICAL JOURNAL, 1989, 68 (01) :5-18

[6] UV ABSORPTION-SPECTROSCOPY FOR MONITORING HYDRIDE VAPOR-PHASE EPITAXY OF INGAASP ALLOYS [J].

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[7] LPE OF BURIED HETEROSTRUCTURE LASER DEVICES [J].

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[8]

LONG JA, 1984, J CRYST GROWTH, V68, P10

[9]

MACRANDER AT, 1988, ANNU REV MATER SCI, V18, P283

[10]

MCKNIGHT LG, 1988, NOV P AICHE ANN M

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