ON THE ACCURATE MEASUREMENT OF STRUCTURE-FACTOR AMPLITUDES AND PHASES BY ELECTRON-DIFFRACTION

被引:136
作者
SPENCE, JCH
机构
来源
ACTA CRYSTALLOGRAPHICA SECTION A | 1993年 / 49卷
关键词
D O I
10.1107/S0108767392005087
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A review is given of research into the measurement of crystal structure-factor amplitudes and phases by transmission electron diffraction. Accuracies for amplitudes are commonly a fraction of a percent (after conversion to X-ray structure factors) while phases may now be measured in favorable cases using three-beam electron diffraction to an accuracy of much better than 1-degrees. Following a brief review of theory, the main techniques are outlined. These include quantitative convergent-beam electron diffraction, the critical-voltage method, the intersecting Kikuchi- and HOLZ-line methods and methods based on weak high-order reflections in wide-angle patterns. Enantiomorphs and polarity are discussed. Summaries are given of measurements of the mean inner potential and of structure factors generally. A brief review of the implications of this work for studies of crystal bonding and ordering in alloys is given, and its use to test ab initio computations of charge density. The mean inner potential is found to be the quantity most sensitive to the bonding distribution of valence electrons and sensitively constrains accurate X-ray structure-factor measurements. Electron diffraction techniques are to be preferred for studies of individual microcrystals or artificially formed structures and for the very accurate measurement of structure-factor phases in acentric crystals with small unit cells.
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页码:231 / 260
页数:30
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共 193 条
[91]   EIN BIPRISMA-INTERFEROMETER FUR ELEKTRONENWELLEN UND SEINE ANWENDUNG [J].
KELLER, M .
ZEITSCHRIFT FUR PHYSIK, 1961, 164 (03) :274-&
[92]   ON THE INCLUSION OF UPPER LAUE LAYERS IN COMPUTATIONAL METHODS IN HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].
KILAAS, R ;
OKEEFE, MA ;
KRISHNAN, KM .
ULTRAMICROSCOPY, 1987, 21 (01) :47-61
[93]  
KOLBY P, 1991, MICRON MICROSC ACTA, V22, P151
[94]   NEW ELECTRON-DIFFRACTION TECHNIQUES USING ELECTRONIC HOLLOW-CONE ILLUMINATION [J].
KONDO, Y ;
ITO, T ;
HARADA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L178-L180
[95]  
KRAKOW W, 1989, COMPUTER SIMULATION
[96]   DETERMINATION OF STRUCTURE POTENTIALS AND ABSORPTION POTENTIALS OF SILICON FROM ELECTRON DIFFRACTION INTENSITIES [J].
KREUTLE, M ;
MEYEREHM.G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01) :111-&
[97]   DETERMINATION OF REAL AND IMAGINARY STRUCTURE POTENTIALS OF SI FROM ELECTRON DIFFRACTION INTENSITIES [J].
KREUTLE, M ;
MEYEREHM.G .
PHYSICA STATUS SOLIDI, 1969, 35 (01) :K17-&
[98]  
KRIVANEK OL, 1986, ELECTRON MICROS, P32
[99]   THE ANHARMONIC TEMPERATURE FACTOR IN CRYSTALLOGRAPHIC STRUCTURE-ANALYSIS [J].
KUHS, WF .
AUSTRALIAN JOURNAL OF PHYSICS, 1988, 41 (03) :369-382
[100]  
KURODA K, 1981, JPN I MET, V22, P535