A STUDY OF VOIDS IN SPUTTERED SIO2

被引：6

作者：

LOGAN, JS ^{[1
]}

HAIT, MJ ^{[1
]}

JONES, HC ^{[1
]}

FIRTH, GR ^{[1
]}

THOMPSON, DB ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576291

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1392 / 1396

页数：5

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[2] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING
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