SETBACK MODULATION DOPING OF HGTE-CDTE MULTIPLE QUANTUM-WELLS

被引：5

作者：

HOFFMAN, CA ^{[1
]}

MEYER, JR ^{[1
]}

BARTOLI, FJ ^{[1
]}

LANSARI, Y ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoassisted molecular beam epitaxy has been used to achieve the first setback modulation doping of HgTe-CdTe heterostructures. A 43 angstrom setback is found to yield a factor-of-2 increase of the mobility over any measured previously for intentionally doped samples, and an 81 angstrom setback leads to further enhancement of the mobility.

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收藏

页码：2282 / 2284

页数：3

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