SURFACTANT-CONTROLLED SOLID-PHASE EPITAXY OF GERMANIUM ON SILICON

被引：88

作者：

OSTEN, HJ

KLATT, J

LIPPERT, G

DIETRICH, B

BUGIEL, E

机构：

[1] Institute of Semiconductor Physics, 0-1200 Frankfurt (Oder)

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.69.450

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

10-nm-thick germanium layers have been grown on Si(100) with and without antimony as a surfactant, and investigated by RHEED, TEM, and XPS. We obtained smooth epitaxial germanium layers with the antimony surfactant by passing through an island formation stage. These islands, formed below 400-degrees-C, are of different structure than the islands obtained without surfactants. A possible mechanism for the "smoothing out" of islands developed in the beginning stage of surfactant-controlled solid phase epitaxy is proposed.

引用

收藏

页码：450 / 453

页数：4

相关论文

共 12 条

[1] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[2] LOW-TEMPERATURE GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2276-2278

[3] DEFECT SELF-ANNIHILATION IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH [J].

HORNVONHOEGEN, M ;

LEGOUES, FK ;

COPEL, M ;

REUTER, MC ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1991, 67 (09) :1130-1133

[4] NOVEL STRAIN-INDUCED DEFECT IN THIN MOLECULAR-BEAM-EPITAXY LAYERS [J].

LEGOUES, FK ;

COPEL, M ;

TROMP, R .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1826-1829

[5] STRAIN-RELIEF MECHANISM IN SURFACTANT-GROWN EPITAXIAL GERMANIUM FILMS ON SI(111) [J].

LEGOUES, FK ;

HORNVONHOEGEN, M ;

COPEL, M ;

TROMP, RM .

PHYSICAL REVIEW B, 1991, 44 (23) :12894-12902

[6] MICROSTRUCTURE AND STRAIN RELIEF OF GE FILMS GROWN LAYER BY LAYER ON SI(001) [J].

LEGOUES, FK ;

COPEL, M ;

TROMP, RM .

PHYSICAL REVIEW B, 1990, 42 (18) :11690-11700

[7] ANTIMONY ADSORPTION ON SILICON [J].

METZGER, RA ;

ALLEN, FG .

SURFACE SCIENCE, 1984, 137 (2-3) :397-411

[8] 2-DIMENSIONAL LATTICE-MISMATCHED HETEROEPITAXY OF GERMANIUM ON SILICON BEYOND THE CRITICAL THICKNESS BY INTRODUCING A SURFACTANT [J].

OSTEN, HJ ;

KLATT, J ;

LIPPERT, G ;

BUGIEL, E ;

HINRICH, S .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2522-2524

[9] VANDERWAALS EPITAXY OF THICK SB, GE, AND GE/SB FILMS ON MICA [J].

OSTEN, HJ ;

KLATT, J ;

LIPPERT, G .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :44-46

[10]

OSTEN HJ, IN PRESS J VAC SCI B