EXAMINATION OF PRODUCT CATALYZED REACTION OF TRIMETHYLGALLIUM WITH PHOSPHINE AND MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE

被引：54

作者：

SCHLYER, DJ ^{[1
]}

RING, MA ^{[1
]}

机构：

[1] CALIF STATE UNIV SAN DIEGO,DEPT CHEM,SAN DIEGO,CA 92182

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 04期

关键词：

D O I：

10.1149/1.2133352

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：569 / 573

页数：5

共 15 条

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[7] SURVEY OF HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR-FILMS ON INSULATING SUBSTRATES
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[9] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS
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[10] Petzke W.-H., 1974, Kristall und Technik, V9, P763, DOI 10.1002/crat.19740090706

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