HIGH-POWER GATE TURN-OFF THYRISTORS

被引：7

作者：

AZUMA, M

NAKAGAWA, A

TAKIGAMI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：275 / 281

页数：7

共 12 条

[1]

AZUMA M, UNPUBLISHED

[2]

BECKE HW, 1975, POWER ELECTRONICS SP, P292

[3]

FULOP W, 1963, IEEE T ELECTRON DEV, V10, P120

[4] TURN-OFF GAIN IN P-N-P-N TRIODES [J].

GOLDEY, JM ;

MACKINTOSH, IM ;

ROSS, IM .

SOLID-STATE ELECTRONICS, 1961, 3 (02) :119-122

[5]

Kao Y. C., 1973, IEEE Power Electronics Specialists Conference 1973, P90

[6]

LIGTEN RH, 1960, IRE WESCON CONVENTIO, P49

[7]

NAKAGAWA A, UNPUBLISHED

[8] HIGH POWER GATE-CONTROLLED SWITCH [J].

NEW, TC ;

FROBENIUS, WD ;

DESMOND, TJ ;

HAMILTON, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :706-+

[9]

OKAMURA M, 1977, IEEE INT SEMICONDUCT, P39

[10] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862

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