A COMPARATIVE-STUDY OF THE DIFFUSION BARRIER PROPERTIES OF TIN AND ZRN

被引：89

作者：

OSTLING, M

NYGREN, S

PETERSSON, CS

NORSTROM, H

BUCHTA, R

BLOM, HO

BERG, S

机构：

[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN

[2] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN

来源：

关键词：

D O I：

10.1016/0040-6090(86)90254-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：81 / 88

页数：8

共 13 条

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WITTMER, M
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CUOMO, JJ
[J]. THIN SOLID FILMS, 1983, 104 (1-2) : 81 - 87
[3] DIFFUSION BARRIERS IN THIN-FILMS
NICOLET, MA
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[4] LIMITATION OF TI/TIN DIFFUSION BARRIER LAYERS IN SILICON TECHNOLOGY
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[J]. VACUUM, 1985, 35 (12) : 547 - 553
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[7] ARSENIC DISTRIBUTION IN BILAYERS OF TISI2 ON POLYCRYSTALLINE SILICON DURING HEAT-TREATMENT
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