DOSE DEPENDENCE OF CRYSTALLIZATION IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2

被引：14

作者：

IVERSON, RB

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.99392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：645 / 647

页数：3

共 13 条

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[4] LARGE SPONTANEOUS NUCLEATION RATE IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].

IVERSON, RB ;

REIF, R .

MATERIALS LETTERS, 1987, 5 (10) :393-395

[5] STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5169-5175

[6] DEPTH DEPENDENCE OF NUCLEATION IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].

IVERSON, RB ;

REIF, R .

MATERIALS LETTERS, 1987, 5 (11-12) :460-462

[7] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1675-1681

[8]

IVERSON RB, 1984, MATER RES SOC S P, V27, P543

[9]

Johnson WA, 1939, T AM I MIN MET ENG, V135, P416

[10] TRANSIENT NUCLEATION IN CONDENSED SYSTEMS [J].

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