DEPTH DEPENDENCE OF NUCLEATION IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2

被引:2
作者
IVERSON, RB
REIF, R
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D O I
10.1016/0167-577X(87)90065-6
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T [工业技术];
学科分类号
08 ;
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页码:460 / 462
页数:3
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共 13 条
[1]   RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J].
BRICE, DK .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3385-3394
[2]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[3]   LARGE SPONTANEOUS NUCLEATION RATE IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].
IVERSON, RB ;
REIF, R .
MATERIALS LETTERS, 1987, 5 (10) :393-395
[4]   STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].
IVERSON, RB ;
REIF, R .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5169-5175
[5]  
IVERSON RB, UNPUB J APPL PHYS
[6]  
IVERSON RB, 1984, MATER RES SOC S P, V27, P543
[7]  
KERN W, 1970, RCA REV, V31, P187
[8]   THE EFFECT OF GERMANIUM ION-IMPLANTATION DOSE ON THE AMORPHIZATION AND RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS [J].
KOMEM, Y ;
HALL, IW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6655-6658
[9]   IMPLANT-DOSE DEPENDENCE OF GRAIN-SIZE AND (110) TEXTURE ENHANCEMENTS IN POLYCRYSTALLINE SI FILMS BY SEED SELECTION THROUGH ION CHANNELING [J].
KUNG, KTY ;
REIF, R .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2422-2428
[10]   ATOMIC-STRUCTURE OF ION-IMPLANTATION DAMAGE AND PROCESS OF AMORPHIZATION IN SEMICONDUCTORS [J].
NARAYAN, J ;
FATHY, D ;
OEN, OS ;
HOLLAND, OW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1303-1308