HIGH-RESOLUTION IMAGING OF DIELECTRIC SURFACES WITH AN EVANESCENT FIELD OPTICAL MICROSCOPE

被引：36

作者：

VANHULST, NF

SEGERINK, FB

BOLGER, B

机构：

[1] Opto-electronics, Applied Physics, University of Twente, 7500 AE Enschede

来源：

OPTICS COMMUNICATIONS | 1992年 / 87卷 / 5-6期

关键词：

D O I：

10.1016/0030-4018(92)90461-Y

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An evanescent field optical microscope (EFOM) is presented which employs frustrated total internal reflection on a localized scale by scanning a dielectric tip in close proximity to a sample surface. High resolution images of dielectric gratings and spheres containing both topographic and dielectric information have been obtained. The resolution obtained is 30 nm in the lateral directions and 0.1 nm in height depending on proper tip fabrication.

引用

页码：212 / 218

页数：7

共 17 条

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