CHEMISORPTION OF H2O ON THE SI(111) 7 X 7 SURFACES

被引：22

作者：

FUJIWARA, K

OGATA, H

机构：

[1] Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90449-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemisorption of H2O on the thermally cleaned Si(111) 7 × 7 surfaces has been studied by ultraviolet photoemission, energy loss and Auger electron spectroscopies. We provide direct experimental evidence that, at room temperature, the molecules non-dissociatively adsorb in a single state. It is also found that, with increasing annealing temperature up to ∼1500 K, the reaction processes proceed in three steps: molecular adsorption, dissociation and hydrogen desorption and oxygen desorption. © 1979.

引用

页码：700 / 705

页数：6

共 8 条

[1] AUER PP, 1974, 2ND P INT C SOL SURF
[2] ADSORPTION OF H2S, H2O AND O2 ON SI(111) SURFACES
FUJIWARA, K
OGATA, H
NISHIJIMA, M
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (09) : 895 - 897
[3] INTERACTIONS OF WATER-VAPOR AND OXYGEN WITH SI(111) SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY
FUJIWARA, K
OGATA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4360 - 4364
[4] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718
[5] PHOTOEMISSION MEASUREMENTS OF SURFACE STATES FOR CLEAVED AND ANNEALED GE(111) SURFACES
MUROTANI, T
FUJIWARA, K
NISHIJIMA, M
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2424 - 2426
[6] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON
ROWE, JE
IBACH, H
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (08) : 421 - 424
[7] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA
ROWE, JE
IBACH, H
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 102 - 105
[8] Turner D.W., 1970, MOL PHOTOELECTRON SP

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