INTERACTIONS OF WATER-VAPOR AND OXYGEN WITH SI(111) SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY

被引：16

作者：

FUJIWARA, K ^{[1
]}

OGATA, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4360 / 4364

页数：5

相关论文

共 19 条

[1] BOONSTRA AH, 1968, PHILIPS RES REP S3
[2] STUDIES OF ACETYLENE AND OXYGEN-ADSORPTION ON SILICON SURFACES BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY
CHUNG, YW
SIEKHAUS, W
SOMORJAI, GA
[J]. SURFACE SCIENCE, 1976, 58 (02) : 341 - 348
[3] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .2.
DORN, R
LUTH, H
IBACH, H
[J]. SURFACE SCIENCE, 1974, 42 (02) : 583 - 594
[4] ADSORPTION OF H2S, H2O AND O2 ON SI(111) SURFACES
FUJIWARA, K
OGATA, H
NISHIJIMA, M
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (09) : 895 - 897
[5] ADSORPTION OF WATER-VAPOR ON SI(111) SURFACES
FUJIWARA, K
NISHIJIMA, M
[J]. PHYSICS LETTERS A, 1975, 55 (04) : 211 - 212
[6] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718
[7] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1951 - 1957
[8] OXIDATION OF CLEAN GE AND SI SURFACES
LUDEKE, R
KOMA, A
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (18) : 1170 - 1173
[9] STUDY OF OXIDATION AND REDUCTION BY WATER VAPOR OF SI (111) SURFACES USING AUGER-ELECTRON EMISSION
MAGUIRE, HG
AUGUSTUS, PD
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (01): : 101 - 108
[10] Meyer F., 1975, SURFACE PHYSICS PHOS, P321